CMOS-comp Silicon
نویسندگان
چکیده
We present a Tungsten thermo-opti using standard CMOS back-end fabrication p efficiency of 35.2mW/FSR was achieved on rin 10%-90% heating time of 2.8μs.
منابع مشابه
Multimode Flex-Interleaver Core for Baseband Processor Platform
This paper presents a flexible interleaver architecture supporting multiple standards like WLAN, WiMAX, HSPA+, 3GPP-LTE, and DVB. Algorithmic level optimizations like 2D transformation and realization of recursive computation are applied, which appear to be the key to reach to an efficient hardware multiplexing among different interleaver implementations. The presented hardware enables the mapp...
متن کاملOptical pulse compression based on nonlinear silicon waveguides and chirped Bragg gratings
Due to the growing demand for higher bandwidth, employing optical devices instead of electronic devices in data transmission systems has attracted much attention in recent years. Optical switches, modulators and wavelength converters are a few examples of the required optical devices. CMOS compatible fabrication of these devices, leads to much more growing of this technology. Optical pulse comp...
متن کاملطراحی و مدل سازی مبدل های آنالوگ به دیجیتال سازگار با دمای اتاق به کمک نانوترانزیستورهای تک الکترونی با جزیره کوانتوم نقطه ای نیمه هادی
In this article, the design and modeling details of room-temperature analog-to-digital converter (ADC) based on silicon quantum-dot (QD) single-electron transistors (SETs) is presented. In contrast to the conventional metal quantum dots, the use of silicon QDs in the scales of few nano-meters enhances the device operation and makes stable the Coulomb blockade and Coulomb oscillation regimes at ...
متن کاملElectrostatic Discharge (ESD) and Failure Analysis: Models, Methodologies and Mechanisms for CMOS, Silicon On Insulator and Silicon Germanium Technologies
−Failure analysis is fundamental to the design and development methodology of electrostatic discharge (ESD) devices and ESD robust circuits. The role of failure analysis (FA) in the models, methodology, band mechanisms evaluation for improving ESD robustness of semiconductor products in CMOS, silicon-on-insulator (SOI) and silicon germanium (SiGe) technologies will be reviewed. Index Terms−Reli...
متن کاملGraphene/Si CMOS Hybrid Hall Integrated Circuits
Graphene/silicon CMOS hybrid integrated circuits (ICs) should provide powerful functions which combines the ultra-high carrier mobility of graphene and the sophisticated functions of silicon CMOS ICs. But it is difficult to integrate these two kinds of heterogeneous devices on a single chip. In this work a low temperature process is developed for integrating graphene devices onto silicon CMOS I...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2012